Samsung recently announced the development of a 512GB DDR5 memory, claiming it to be the company’s first DRAM that adheres to the new DDR5 standard. JEDDEC developed the DDR5 standard in July of last year.
The hardware is built using high-k metal gate (HKMG) process technology, which allows for a data transfer rate of 7,200 Mbps. This speed is said to be twice as fast as the previous DDR4 model. For the module, the company stacked nearly 16GBs of DRAM chips.
Furthermore, the latest DDR5 will be able to handle the most compute-intensive, high-bandwidth workloads in supercomputing, AI, and machine learning, as well as data analytics applications.
The advanced HKMG technology will be used in the DDR5, which will thin the insulation layer, resulting in a higher leakage current. In a nutshell, the new memory would use 13% less power than previous generations, allowing data centers to be more energy efficient in critical situations.
